Pâ•'18: Improving Switching Characteristics of pâ•'type Copper Oxide Thinâ•' film Transistors by Germanium Oxide P
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XRD of as-deposited and 500 °C annealed GeOx films on silicon substrate | Download Scientific Diagram
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A very low temperature (170 °C) crystallization of amorphous-Ge thin film on glass via Au induced layer exchange process in amorphous-Ge/GeOx/Au/glass stack and electrical characterization - ScienceDirect
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Determination of the infrared absorption cross-section of the stretching vibrations of Ge–O bonds in GeOx films - ScienceDirect
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